Preparation of YBCO/ZrO2 thin films on Si by MOCVD using a mode converting type of microwave plasma apparatus

Thin Solid Films

Volumn 341, Issue 1, 1999, Pages 132-135

  Komatsu, Y ^a   Sato, T ^a   Ito, S ^a   Akashi, K ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CRYSTAL ORIENTATION; FILM PREPARATION; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR PLASMAS; SUBSTRATES; TEMPERATURE; YTTRIUM BARIUM COPPER OXIDES;

CRITICAL TEMPERATURE; EPITAXIAL FILMS; MICROWAVE PLASMA; MODE CONVERTER;

SUPERCONDUCTING FILMS;

EID: 0032641356     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01509-0     Document Type: Article

References (7)

1. Tiwari P. Appl. Phys. Lett. 57:1990;578.
2. Harada K. Jpn. J. Appl. Phys. 130:1991;934.
3. Matthee Th. Appl. Phys. Lett. 61:1992;1240.
4. Kim J.S. Thin Solid Films. 254:1995;33.
5. Kim E.T. Thin Solid Films. 227:1993;7.
6. Gould B.J. J. Mater. Chem. 4:1994;1815.
7. Takahashi Y. J. Cryst. Growth. 74:1986;409.