Carrier recombination processes in GaN, AlGaN, and InGaN epilayers

Physica Status Solidi (A) Applied Research

Volumn 199, Issue 2, 2003, Pages 347-354

  Ichimiya, M ^a   Hayashi, T ^a   Watanabe, M ^a   Ohata, T ^a   Ishibashi, A ^b  

^a KYOTO UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CARRIER CONCENTRATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

RECOMBINATION PROCESSES;

GALLIUM NITRIDE;

EID: 0142228677     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306649     Document Type: Article

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