Epitaxial growth of pure 30Si layers on a natural Si(100) substrate using enriched 30SiH4

Japanese journal of applied physics

Volumn 39, Issue 11 B, 2000, Pages

  Nakabayashi, Yukio ^a   Segawa, Toru ^a   Osman, Hirman I ^a   Saito, Kazumasa ^a   Matsumoto, Satoru ^a   Murota, Junichi ^b   Wada, Kazumi ^c   Abe, Takao ^d  

^a KEIO UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Massachusetts Institute of Technology Cambridge   (United States)

^d Isobe R and D Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; HETEROJUNCTIONS; INTERFACES (MATERIALS); ISOTOPES; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SILANES;

GAS SOURCE MOLECULAR BEAM EPITAXY (GS-MBE);

SILICON;

EID: 0034318201     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1133     Document Type: Article

References (6)

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6. A. Ural, P. B. Griffin and J. D. Plummer: Appl. Phys. Lett. 73 (1998) 1706.