Self-diffusion in intrinsic and extrinsic silicon using isotopically pure 30silicon layer

Materials Research Society Symposium - Proceedings

Volumn 669, Issue , 2001, Pages

  Nakabayashi, Yukio ^a   Osman, Hirman I ^a   Segawa, Toru ^a   Toyonaga, Kazunari ^a   Matsumoto, Satoru ^a   Murota, Junichi ^a   Wada, Kazumi ^a   Abe, Takao ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; FERMI LEVEL; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

INTRINSIC DIFFUSION COEFFICIENTS;

SEMICONDUCTING SILICON;

EID: 0035557036     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-669-j3.3     Document Type: Conference Paper

References (11)

1. Radiation effects in semiconductors 1976