SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 245, Issue 1-3, 1999, Pages 238-244

Electron irradiation effects on thin MOS capacitors

(5) Candelori, A a Paccagnella, A a Cammarata, M a Ghidini, G b Ceschia, M a

a UNIVERSITY OF PADOVA (Italy)

b STMICROELECTRONICS (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON IRRADIATION; ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); IONIZING RADIATION; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; STRESS ANALYSIS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRICAL STRESS; FOWLER-NORDHEIM TUNNELING; RADIATION STRESS;

MOS CAPACITORS;

EID: 0032657311 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00887-4 Document Type: Article

Times cited : (13)

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