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Volumn 1, Issue , 2002, Pages 33-37

Bismuth tri-iodide polycrystalline films for digital X-ray radiography applications

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GRAIN SIZE AND SHAPE; PHYSICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; X RAY RADIOGRAPHY;

EID: 0142148274     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (30)
  • 2
    • 0033347035 scopus 로고    scopus 로고
    • A real-time X-ray Image Sensor using a Thallium Bromide Photoconductor
    • D.R. Ouimette, R.M. Lodice, P-J. Kung and L. Lynds, "A real-time X-ray Image Sensor using a Thallium Bromide Photoconductor", in Proc. SPIE, vol. 3770 (1999), pp. 156-163.
    • (1999) Proc. Spie , vol.3770 , pp. 156-163
    • Ouimette, D.R.1    Lodice, R.M.2    Kung, P.-J.3    Lynds, L.4
  • 5
    • 0035251059 scopus 로고    scopus 로고
    • On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors
    • N. Lovergine, A. Cola, P. Prete, L. Tapfer, M. Bayhan and A.M. Mancini, "On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors", Nucl. Instr. Meth., vol. A458, pp. 1-6, 2001.
    • (2001) Nucl. Instr. Meth. , vol.A458 , pp. 1-6
    • Lovergine, N.1    Cola, A.2    Prete, P.3    Tapfer, L.4    Bayhan, M.5    Mancini, A.M.6
  • 6
    • 0035250993 scopus 로고    scopus 로고
    • Thin-film CdTe for imaging detector applications
    • A.M.D. Ede, E.J. Morton and P. DeAntonis, "Thin-film CdTe for imaging detector applications", Nucl. Instr. Meth., vol. A458, pp. 7-11, 2001.
    • (2001) Nucl. Instr. Meth. , vol.A458 , pp. 7-11
    • Ede, A.M.D.1    Morton, E.J.2    Deantonis, P.3
  • 16
    • 34249876619 scopus 로고    scopus 로고
    • Polycrystalline lead iodide films: Optical, electrical and X-ray counting characterization
    • L. Fornaro, E. Saucedo, L. Mussio, A. Gancharov, F. Guimaraes and A. Hernandes, (2001). Polycrystalline lead iodide films: optical, electrical and X-ray counting characterization. Mat. Res. Soc. Symp. Proc., vol. 685E, pp. D5.7.1-D5.7.8, Available: http://www.mrs.org/publications/epubs/proceedings/spring2001/d/
    • (2001) Mat. Res. Soc. Symp. Proc. , vol.685 E
    • Fornaro, L.1    Saucedo, E.2    Mussio, L.3    Gancharov, A.4    Guimaraes, F.5    Hernandes, A.6
  • 17
    • 0035764958 scopus 로고    scopus 로고
    • Comparison between sublimation and evaporation as processes for growing lead iodide Polycrystalline films
    • L. Fornaro, E. Saucedo, L. Mussio and A. Gancharov, "Comparison between sublimation and evaporation as processes for growing lead iodide Polycrystalline films", in Proc. SPIE, vol. 4507, 2001, pp. 99-107.
    • (2001) Proc. SPIE , vol.4507 , pp. 99-107
    • Fornaro, L.1    Saucedo, E.2    Mussio, L.3    Gancharov, A.4
  • 18
    • 0036816480 scopus 로고    scopus 로고
    • Toward epitaxial lead iodide films for X-ray digital imaging
    • October
    • L. Fornaro, E. Saucedo, L. Mussio and A. Gancharov, "Toward epitaxial lead iodide films for X-ray digital imaging", Trans. on Nucl. Sci., vol. 49, N. 5, October 2002.
    • (2002) Trans. on Nucl. Sci. , vol.49 , Issue.5
    • Fornaro, L.1    Saucedo, E.2    Mussio, L.3    Gancharov, A.4
  • 20
    • 0029633462 scopus 로고
    • The growth and crystallography of bismuth tri-iodide crystals grown by vapor transport
    • D. Nason and L. Keller, "The growth and crystallography of bismuth tri-iodide crystals grown by vapor transport", J. of Crystal Growth, vol. 156, pp. 221-226, 1995.
    • (1995) J. of Crystal Growth , vol.156 , pp. 221-226
    • Nason, D.1    Keller, L.2
  • 21
    • 0033328358 scopus 로고    scopus 로고
    • Bismuth Iodide Crystals as a Detector Material: Some Optical and Electrical Properties
    • Y. Dmitriev, P. Bennett, L. Cirignano, M. Klugerman and K. Shah, "Bismuth Iodide Crystals as a Detector Material: Some Optical and Electrical Properties", in Proc. SPIE, vol. 3766, 1999, pp. 521-529.
    • (1999) Proc. SPIE , vol.3766 , pp. 521-529
    • Dmitriev, Y.1    Bennett, P.2    Cirignano, L.3    Klugerman, M.4    Shah, K.5
  • 22
    • 0003107871 scopus 로고
    • The Bismuth - Bismuth Tribromide and Bismuth - Bismuth Triiodide System
    • S.J. Yosim,LK.D. Ransom, R.A. Sallach and L.E. Topol, "The Bismuth - Bismuth Tribromide and Bismuth - Bismuth Triiodide System", J. Phys. Chem., vol. 66, pp. 28-31, 1962.
    • (1962) J. Phys. Chem. , vol.66 , pp. 28-31
    • Yosim, S.J.1    Ransom, L.K.D.2    Sallach, R.A.3    Topol, L.E.4
  • 24
    • 0036702949 scopus 로고    scopus 로고
    • New ways for purifying lead iodide appropriate as spectrometric grade material
    • August
    • E. Saucedo, L. Fornaro, L. Mussio and A. Gancharov, "New ways for purifying lead iodide appropriate as spectrometric grade material", Trans. on Nucl. Sci., vol. 49, N. 4, August 2002.
    • (2002) Trans. on Nucl. Sci. , vol.49 , Issue.4
    • Saucedo, E.1    Fornaro, L.2    Mussio, L.3    Gancharov, A.4
  • 28
    • 0036816621 scopus 로고    scopus 로고
    • Bismuth Tri-Iodide Crystals for Nuclear Radiation Detectors
    • August
    • M. Matsumoto, K. Hitomi, T. Shoji and Y. Hiratate, "Bismuth Tri-Iodide Crystals for Nuclear Radiation Detectors", Trans. on Nucl. Sci., vol. 49, N. 4, August 2002.
    • (2002) Trans. on Nucl. Sci. , vol.49 , Issue.4
    • Matsumoto, M.1    Hitomi, K.2    Shoji, T.3    Hiratate, Y.4
  • 29
    • 0025419770 scopus 로고
    • S. Takeyama, K. Watanabe and T. Komatsu, Jpn. J. Appl. Phys., vol 29, pp. 710-715, 1990.F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, and G. L. Hash, "Single event gate rupture on thin gate oxides, "IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2345-2352, Dec. 1997.
    • (1990) Jpn. J. Appl. Phys. , vol.29 , pp. 710-715
    • Takeyama, S.1    Watanabe, K.2    Komatsu, T.3
  • 30
    • 0031386902 scopus 로고    scopus 로고
    • Single event gate rupture on thin gate oxides
    • Dec.
    • S. Takeyama, K. Watanabe and T. Komatsu, Jpn. J. Appl. Phys., vol 29, pp. 710-715, 1990.F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, and G. L. Hash, "Single event gate rupture on thin gate oxides, "IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2345-2352, Dec. 1997.
    • (1997) IEEE Trans. Nucl. Sci. , vol.44 , Issue.6 , pp. 2345-2352
    • Sexton, F.W.1    Fleetwood, D.M.2    Shaneyfelt, M.R.3    Dodd, P.E.4    Hash, G.L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.