Bismuth iodide crystals as a detector material: Some optical and electrical properties

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3768, Issue , 1999, Pages 521-529

  Dmitriev, Yuri N ^a   Bennett, Paul R ^a   Cirignano, Leonard J ^a   Klugerman, Mikhail ^a   Shah, Kanai S ^a  

^a RADIATION MONITORING DEVICES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; OPTICAL PROPERTIES; PHOTOCURRENTS; POLYCRYSTALLINE MATERIALS; QUANTUM EFFICIENCY; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR COUNTERS;

BISMUTH IODIDE; LEAD IODIDE; VERTICAL BRIDGMAN METHOD;

RADIATION DETECTORS;

EID: 0033328358     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)