X-ray imaging using lead iodide as a semiconductor detector

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3659, Issue I, 1999, Pages 36-47

  Street, Robert A ^a   Rahn, Jeffrey T ^a   Ready, Steve E ^a   Shah, Kanai ^a   Bennett, Paul R ^a   Dmitriyev, Y ^a   Mei, Ping ^a   Lu, Jeng Ping ^a   Apte, Raj B ^a   Ho, Jackson ^a   van Schuylenbergh, Koenraad ^a   Lemmi, Francesco ^a   Boyce, James B ^a   Nylen, Per ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; IMAGE SENSORS; PHOTOCONDUCTING MATERIALS; POLYCRYSTALLINE MATERIALS; RADIATION DETECTORS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DEVICES; SUBLIMATION; THIN FILM TRANSISTORS; X RAY RADIOGRAPHY;

LEAD IODIDE; X RAY IMAGING;

MEDICAL IMAGING;

EID: 0032594454     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)