Electronic properties of defects introduced in p-type Si1-xGex during ion etching

Applied Physics Letters

Volumn 73, Issue 2, 1998, Pages 256-258

  Goodman, S A ^a   Auret, F D ^a   Mamor, M ^a   Greiner, A ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0142137400     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121772     Document Type: Article

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