Fabrication of Schottky barrier MOSFETs using self-assembly CoSi 2 nanopatterning and spacer gate technologies

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 186-190

  Zhao, Q T ^a   Kluth, P ^a   Bay, H ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Nanostructure; Schottky barrier MOSFET; Self assembly; Silicide

Indexed keywords

MASKS; NANOSTRUCTURED MATERIALS; NITRIDING; SELF ASSEMBLY; THERMOOXIDATION;

NANOPATTERNING;

MOSFET DEVICES;

EID: 0142043407     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00371-X     Document Type: Conference Paper

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