The Structure of SiO2, its Defects and Radiation Hardness

IEEE Transactions on Nuclear Science

Volumn 41, Issue 3, 1994, Pages 452-459

  Devine, Roderick A B ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; DEFECTS; DOSIMETRY; MODIFICATION; NUCLEAR MAGNETIC RESONANCE; OXYGEN; PARAMAGNETIC RESONANCE; PHOTONS; RADIATION; RADIATION HARDENING; STRUCTURE (COMPOSITION); X RAYS;

ELECTRON SPIN RESONANCE; MICROSCOPIC STRUCTURE; PARAMAGNETIC DEFECTS; RADIATION HARDNESS;

SILICA;

EID: 0028446646     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299784     Document Type: Article

References (24)

1. See for example: G. F. Derbenwick and B. L. Gregory “Process optimization of radiation-hardened CMOS integrated circuits"EEE Trans. Nucl. Sci. NS22, 2151-2156 (1975)
2. R. A. B. Devine, F. Ferrieu and A. Golanski, “A study of Ar implantation induced defects in SiO2 “, Nucl. Inst. Meth. 209/210, 1201-1206 (1983)
3. P. M. Lenahan and P. V. Dressendorfer, “Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures", Appl. Phys. Lett. 44, 96-98 (1984)
4. F J. Feigl, W. B. Fowler and K. L. Yip, “Oxygen vacancy model for the E’ center in SiO2 “, Solid State Commun., 14, 225-229 (1974)
5. K. Yokogawa, Y. Yajimi, T. Mizutani, S. Nisbimatsu and K Suzuki, “Positive charges and E’ centers formed by vacuum ultraviolet radiation in SiO2 grown on Si", Jpn. J. Appl. Phys. 29, 2265-2268 2268 (1990)
6. R. A. B. Devine “Radiation induced structural changes in amorphous SiO2: I. Point defects", Jpn. J. Appl. Phys., 31, 4411-4421 (1992)
7. R. E. Stahlbush, G. J. Campisi, J. B. McKitterick, W. P. Maszara, P. Roitman and G. A. Brown, “Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxide", IEEE Trans. Nucl. Sci. NS-39, 2086-2097 (1992)
8. P. Paillet, D. Hervé J-L. Leray and R. A. B. Devine, “Effect of high temperature processing of Si/SiO2 /Si structures on their response to X-irradiation", irradiation", Appl. Phys. Lett.,63, 2088-2090 (1993)
9. A. G. Revesz and G. V. Gibbs “Structural and bond flexibility of vitreous SiO2 films", in The Physics of MOS Insulators editors G. Lucovsky, S. T. Pantelides and F. L. Galeener, New York: Pergammon, 1980, p 92-96
10. R. Aujla, R. Dupree, I. Farnan and D. Holland, “A comparison of the structure of a-SiO2 prepared by different routes", in The Physics and Technology of Amorphous SiO2 editor R. A. B. Devine, New York: Plenum 1988, p 77-82
11. A. Golanski, R A. B. Devine and J-C. Oberlin, “Irreversible and reversible annealing of paramagnetic oxygen-vacancy (E 1 ) centers in oxygen implanted SiO2 “, J Appl. Phys. 56, 1572-1576 (1984)
12. The TRIM-89 program was kindly supplied by Dr. J. F. Ziegler of IBM, Yorktown Heights
13. G. A. Ausman Jr. and F. B. McLean, “Electron-hole pair creation energy in SiO2 “, Appl. Phys. Lett. 26, 173-175 (1975)
14. W L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur and R. A. B. Devine, “Excess-Si related defect centers in buried SiO2 thin films”. Appl. Phys. Lett, 62, 3330-3332 (1993)
15. K.H. Vanheusden and A. Stesmans, “Characterisation and depth profiling of E’ defects in buried SiO2 “, J. Appl. Phys. 74, 275-283 (1993)
16. D. L. Griscom, “Self-trapped holes in amorphous silicon dioxide", Phys. Rev. B40, 4224-4227 (1989)
17. R. E. Stahlbush, A. H. Edwards, D. L. Griscom and B. J. Mrstik, “Post-irradiation cracking of H 2 and formation of interface states in irradiated metal-oxide-semiconductor semiconductor field effect transistors", J. Appl. Phys. 73, 658-667 (1993)
18. E. H. Nicollian and J. R. Brews, Metal Oxide Semiconductor Physics and Technology New York: Wiley, 1982. Chapter 11
19. J. K. Rudra and W. B. Fowler, “Oxygen vacancy and the E' 1 center in crystalline SiO2 “, Phys. Rev. B35, 8223-8230 (1987)
20. R. A. B. Devine, “Radiation sensitivity enhancement and annealing variation in densified, amorphous SiO2 “, Phys. Rev. B35, 9783-9789 (1987)
21. D. L. Griscom, “Thermal bleaching of X-ray induced defect centers in high purity fused silica by diffusion of radiolytic molecular hydrogen", J. Non-Cryst. Solids 68, 301-325 (1984)
22. D. L. Griscom, “Thermal bleaching of γ-ray induced defect centers in high purity fused silica by diffusion of radiolytic molecular water", in Structure and Bonding in Noncrystalline Solids editors G. E. Walrafen and A. G. Revesz, New York: Plenum 1988. p369-384
23. M. Yoshizawa and A. Hiraiwa, “Insulation degradation of gate oxides by ion implantation", Ext. Abstr.38th Meeting Jap. Soc. Appl. Phys. and Rel. S oc. 695 (1991)
24. M. C. Busch, A. Slaoui, P. Siffert, E. Dooryhee and M. Toulemonde, “Structural and electrical damage induced by high-energy heavy ions in SiO2 /Si structures", J. Appl. Phys. 71, 2596-2601 (1992)