Sensitivity and hysteresis properties of a-WO3, Ta2O5, and a-Si:H gate ion-sensitive field-effect transistors

Optical Engineering

Volumn 41, Issue 8, 2002, Pages 2032-2038

  Chiang, Jung Lung ^a   Chou, Jung Chuan ^a   Chen, Ying Chung ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

a Si:H; a WO3; Hysteresis; ISFET; Sensitivity; Ta2O5

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HYSTERESIS; SENSITIVITY ANALYSIS; TANTALUM COMPOUNDS;

SENSING MEMBRANES;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 0036671311     PISSN: 00913286     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1482099     Document Type: Article

References (17)

1. Development of an ion-sensitive solid-state device for neurophysiological measurements
2. Effect of electrolyte exposure on silicon dioxide in electrolyte oxide semiconductor structures
3. Method of ISFET fabrication
4. A generalized theory of an electrolyte insulator semiconductor field-effect transistor
5. 4 pH-sensing insulators
6. 4 gate pH-ISFETs
7. 3 gate ISFETs
8. 3/electrolyte interface
9. 5 sensing membrane for low drift and high sensitivity pH-ISFET
10. Study of amorphous tin oxide thin films for ISFET applications
11. 3 gate ISFET compared with different membranes
12. Ion sensitive field effect transistor with amorphous tungsten trioxide gate for pH sensing
13. The hysteresis and drift effect of hydrogenated amorphous silicon for ISFET sensor
14. Time-dependence of the chemical response of silicon nitride surfaces
15. Slow pH response effects of silicon nitride ISFET sensors
16. 3) as an actuator electrode material for ISFET-based coulometric sensor actuator systems
17. The pH-sensing properties of tantalum pentoxide films fabricated by metal organic low presure chemical vapor deposition