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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 541-545

Temperature effect on AlN/SiO2 gate pH-Ion-sensitive field-effect transistor devices

(4) Chiang, Jung Lung a,b Chen, Ying Chung a Chou, Jung Chuan a,b,c Cheng, Chien Chuan b

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

c DE LIN INSTITUTE OF TECHNOLOGY (Taiwan)

Author keywords

Aluminum nitride (AIN); Constant voltage constant current (CVCC); ISFET; Sputtering; Temperature coefficient

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTROLYTES; PH EFFECTS; READOUT SYSTEMS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SOLUTIONS; SPUTTERING; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

CONSTANT VOLTAGE CONSTANT CURRENT (CVCC) READOUT CIRCUITS;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 0036478461 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.541 Document Type: Article

Times cited : (18)

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