A Floating RESURF (FRESURF) LD-MOSFET Device Concept

IEEE Electron Device Letters

Volumn 24, Issue 10, 2003, Pages 664-666

  Khemka, Vishnu ^a   Parthasarathy, Vijay ^a   Zhu, Ronghua ^a   Bose, Amitava ^a  

^a MOTOROLA INC   (United States)

Author keywords

Breakdown; Floating RESURF (FRESURF); High side; Lateral double diffused power MOS transistor (LDMOSFET); LDMOS; Punchthrough; Reduced surface field (RESURF); Smart power; Specific on resistance; Voltage

Indexed keywords

ELECTRIC BREAKDOWN; INTEGRATED CIRCUIT MANUFACTURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING;

DRIFT REGION;

MOSFET DEVICES;

EID: 0141987492     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.817369     Document Type: Article

References (10)

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