Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 152-157

  Kurabayashi, T ^a,b   Kono, K ^c   Kikuchi, H ^a,b   Nishizawa, J ^a,b   Esashi, M ^c  

^a Telecommunications Advancement Organization of Japan   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Adsorption; A1. Atomic force microscopy; A1. Growth models; A1. Surface processes; A3. Atomic layer epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DECOMPOSITION; MOLECULAR BEAM EPITAXY; PRESSURE EFFECTS; SEMICONDUCTOR GROWTH;

MOLECULAR LAYER EPITXY (MLE);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035399405     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01111-3     Document Type: Article

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