Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl-beryllium

Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 38-42

  Mitsuhara, Manabu ^a   Ogasawara, Matsuyuki ^a   Sugiura, Hideo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Beryllium; Gaseous dopant; InP; MOMBE; P type doping

Indexed keywords

ANNEALING; BERYLLIUM; CARRIER CONCENTRATION; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; QUANTUM WELL LASERS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

METALLORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031647102     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00336-9     Document Type: Article

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