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Volumn 361, Issue 1803, 2003, Pages 393-401

The engineering of quantum-dot devices

Author keywords

Devices; Manufacture; Quantum dot; Reproducibility; Semiconductor; Tunnelling

Indexed keywords


EID: 0141957193     PISSN: 1364503X     EISSN: None     Source Type: Journal    
DOI: 10.1098/rsta.2002.1135     Document Type: Conference Paper
Times cited : (4)

References (17)
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    • 0030128727 scopus 로고    scopus 로고
    • Inhomogeneous line broadening and the threshold current density of a semiconductor QD laser
    • Asryan, L. V. & Sulis, R. A. 1996 Inhomogeneous line broadening and the threshold current density of a semiconductor QD laser. Semicond. Sci. Technol. 11, 554-567.
    • (1996) Semicond. Sci. Technol. , vol.11 , pp. 554-567
    • Asryan, L.V.1    Sulis, R.A.2
  • 2
    • 0031187417 scopus 로고    scopus 로고
    • Manufacturability of heterojunction tunnel devices: Further progress
    • Billen, K., Wilkinson, V. A. & Kelly, M. J. 1997 Manufacturability of heterojunction tunnel devices: further progress. Semicond. Sci. Technol. 12, 894-898.
    • (1997) Semicond. Sci. Technol. , vol.12 , pp. 894-898
    • Billen, K.1    Wilkinson, V.A.2    Kelly, M.J.3
  • 5
    • 0033639980 scopus 로고    scopus 로고
    • New statistical analysis of tunnel diode barriers
    • Kelly, M. J. 2000 New statistical analysis of tunnel diode barriers. Semicond. Sci. Technol. 15, 79-83.
    • (2000) Semicond. Sci. Technol. , vol.15 , pp. 79-83
    • Kelly, M.J.1
  • 6
    • 42749106913 scopus 로고    scopus 로고
    • Minute SiGe quantum dots on Si(001) by kinetic 3D island mode
    • Koch; R., Wedler, G., Schulz, J. J. & Wassermann, B. 2001 Minute SiGe quantum dots on Si(001) by kinetic 3D island mode. Phys. Rev. Lett. 87, 136104.
    • (2001) Phys. Rev. Lett. , vol.87 , pp. 136104
    • Koch, R.1    Wedler, G.2    Schulz, J.J.3    Wassermann, B.4
  • 9
    • 0039929148 scopus 로고
    • Reproducible growth and applications of AlAs/GaAs double-barrier resonant tunnelling diodes
    • Mars, D. E., Yang, L., Tan, R. T. M. & Rosner, S. J. 1993 Reproducible growth and applications of AlAs/GaAs double-barrier resonant tunnelling diodes. J. Vac. Sci. Technol. B 11, 965-968.
    • (1993) J. Vac. Sci. Technol. B , vol.11 , pp. 965-968
    • Mars, D.E.1    Yang, L.2    Tan, R.T.M.3    Rosner, S.J.4
  • 14
    • 0027871113 scopus 로고
    • Microwave detection using GaAs/AlAs tunnel structures
    • Syme, R. T. 1993 Microwave detection using GaAs/AlAs tunnel structures. GEC J. Res. 11, 12-23.
    • (1993) GEC J. Res. , vol.11 , pp. 12-23
    • Syme, R.T.1
  • 16
    • 0009017456 scopus 로고
    • Heterojunction properties
    • ed. R. K. Willardson & A. C. Beer, ch. 6. Academic
    • Tansley, T. L. 1971 Heterojunction properties. In Semiconductors and semimetals (ed. R. K. Willardson & A. C. Beer), vol. 7a, ch. 6, pp. 293-368. Academic.
    • (1971) Semiconductors and Semimetals , vol.7 A , pp. 293-368
    • Tansley, T.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.