Precision growth for the manufacture of semiconductor heterostructure devices

Semiconductor Science and Technology

Volumn 16, Issue 8, 2001, Pages 676-678

  Hayden, R K ^a,c   Missous, M ^b   Kelly, M J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; ELECTRIC PROPERTIES; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TUNNEL DIODES;

EX SITU MATERIALS ANALYSIS; GROWTH SYSTEMS; MICROWAVE TUNNEL DETECTOR; TUNNEL BARRIER;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035421146     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/8/306     Document Type: Article

References (5)