Ion implantation enhanced intermixing of Al-free 980 nm laser structures

Applied Physics Letters

Volumn 73, Issue 1, 1998, Pages 67-69

  Piva, P G ^a   Charbonneau, S ^a   Goldberg, R D ^b   Mitchell, I V ^b   Hillier, G ^c   Miner, C ^c  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003059296     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121725     Document Type: Article

References (15)

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12. These measurements were also repeated under cw Ti:sapphire excitation at 790 nm (4.2 and 293 K) and 830 nm (4.2 K) to avoid co-excitation of the InGaAsP/InGaP layers with similar quantitative/qualitative results being obtained.
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