메뉴 건너뛰기




Volumn 39, Issue 5 II, 2003, Pages 2815-2817

Degradation and Breakdown of Plasma Oxidized Magnetic Tunnel Junctions: Single Trap Creation in AL2O3 Tunnel Barriers

Author keywords

Dielectric breakdown; Magnetic tunnel junctions; Reliability

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC BREAKDOWN; EXTRAPOLATION; PLASMA APPLICATIONS; RANDOM PROCESSES; STRESS ANALYSIS; TUNNEL JUNCTIONS;

EID: 0141953092     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2003.815721     Document Type: Article
Times cited : (4)

References (9)
  • 4
    • 0035356138 scopus 로고    scopus 로고
    • Voltage induced barrier-layer damage in spin-dependent tunneling junctions
    • D. Rao, K. Sin, M. Gibbons, S. Funada, M. Mao, C. Chien, and H.-C. Tong, "Voltage induced barrier-layer damage in spin-dependent tunneling junctions," J. Appl. Phys., vol. 89, pp. 7362-7364, 2001.
    • (2001) J. Appl. Phys. , vol.89 , pp. 7362-7364
    • Rao, D.1    Sin, K.2    Gibbons, M.3    Funada, S.4    Mao, M.5    Chien, C.6    Tong, H.-C.7
  • 5
    • 0036535991 scopus 로고    scopus 로고
    • Dielectric breakdown in magnetic tunnel junctions having an ultrathin barrier
    • B. Oliver, Q. He, X. Tang, and J. Nowak, "Dielectric breakdown in magnetic tunnel junctions having an ultrathin barrier,"J. Appl. Phys., vol. 91, pp. 4348-4352, 2002.
    • (2002) J. Appl. Phys. , vol.91 , pp. 4348-4352
    • Oliver, B.1    He, Q.2    Tang, X.3    Nowak, J.4
  • 6
    • 0037094617 scopus 로고    scopus 로고
    • Area scaling and voltage dependence of time-to-breakdown in magnetic tunnel junctions
    • J. Das, R. Degraeve. P. Roussel, G. Groeseneken, G. Borghs, and J. De Boeck, "Area scaling and voltage dependence of time-to-breakdown in magnetic tunnel junctions," J. Appl. Phys., vol. 91, pp. 7712-7714, 2002.
    • (2002) J. Appl. Phys. , vol.91 , pp. 7712-7714
    • Das, J.1    Degraeve, R.2    Roussel, P.3    Groeseneken, G.4    Borghs, G.5    De Boeck, J.6
  • 7
    • 0041421149 scopus 로고    scopus 로고
    • Statistical model for prebreakdown current jumps and breakdown caused by single traps in magnetic tunnel junctions
    • J. Das, R. Degraeve, G. Groeseneken, S. Stein, H. Kohlstedt, G. Borghs, and J. De Boeck, "Statistical model for prebreakdown current jumps and breakdown caused by single traps in magnetic tunnel junctions," J. Appl. Phys., vol. 94, pp. 2749-2751, 2003.
    • (2003) J. Appl. Phys. , vol.94 , pp. 2749-2751
    • Das, J.1    Degraeve, R.2    Groeseneken, G.3    Stein, S.4    Kohlstedt, H.5    Borghs, G.6    De Boeck, J.7
  • 9
    • 0141895205 scopus 로고    scopus 로고
    • Statistical model for stress-induced leakage current and pre-breakdown current in ultra-thin oxide layers
    • R. Degraeve et al., "Statistical model for stress-induced leakage current and pre-breakdown current in ultra-thin oxide layers," in IEDM Tech. Dig., 2001, pp. 6.2.1-6.2.4.
    • (2001) IEDM Tech. Dig. , pp. 621-624
    • Degraeve, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.