CMOS-compatible photodetector fabricated on thick SOI having deep implanted electrodes

Electronics Letters

Volumn 38, Issue 20, 2002, Pages 1202-1204

  Thomas, S G ^a   Csutak, S ^a,b   Jones, R E ^a   Bharatan, S ^a   Jasper, C ^a   Thomas, R ^a   Zirkle, T ^a   Campbell, J C ^b  

^a MOTOROLA INC   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; FREQUENCY RESPONSE; LEAKAGE CURRENTS; OHMIC CONTACTS; PHOTORESISTS; QUANTUM EFFICIENCY; RAPID THERMAL ANNEALING; SEMICONDUCTOR LASERS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

BURIED OXIDE; SEMICONDUCTOR PARAMETER ANALYZER; VERTICAL CAVITY SURFACE EMITTING LASER;

PHOTODETECTORS;

EID: 0037179897     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020832     Document Type: Article

References (6)

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