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Volumn 2, Issue , 2001, Pages 839-840
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High-efficiency, 10 GHz bandwidth resonant-cavity-enhanced silicon photodetectors operating at 850 nm wavelength
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BANDWIDTH;
CAVITY RESONATORS;
CHEMICAL VAPOR DEPOSITION;
CMOS INTEGRATED CIRCUITS;
FAST FOURIER TRANSFORMS;
FREQUENCY DOMAIN ANALYSIS;
ION IMPLANTATION;
MIRRORS;
MOLECULAR BEAM EPITAXY;
QUANTUM EFFICIENCY;
SILICON ON INSULATOR TECHNOLOGY;
SINGLE CRYSTALS;
SUBSTRATES;
VLSI CIRCUITS;
DISTRIBUTED BRAGG REFLECTORS;
RESONANT-CAVITY-ENHANCED (RCE) SILICON PHOTODETECTORS;
PHOTODETECTORS;
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EID: 0035654967
PISSN: 10928081
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (4)
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References (7)
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