The high quality low temperature oxidation technology in a quasi self-aligned SiGe HBT

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2001, Pages 77-82

  Lai, Li Shyue ^a   Tseng, Yang Tai ^a   Lee, Lung Sheng ^a   Jean, Yuh Sheng ^a   Hsu, Yu Min ^a   Hwang, Hang Ping ^a   Lu, Shin Chii ^a   Tsai, Ming Jinn ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DENSIFICATION; ELECTRIC CURRENTS; FREQUENCIES; LOW TEMPERATURE OPERATIONS; MOS CAPACITORS; NITROGEN COMPOUNDS; OXIDATION; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

BORON OUT-DIFFUSION EFFECT; BREAKDOWN FIELD; DIELECTRIC LAYER DEPOSITION; EMITTER BASE JUNCTION ISOLATION; INTERFACE STATE DENSITY; LOW TEMPERATURE OXIDATION TECHNOLOGY; QUASI SELF ALIGNED; RAPID THERMAL PROCESSOR; STRAIN RELAXATION; THERMAL OXIDATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035574649     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. max and 6.7-ps ECL
2. Optimization of SiGe HBT technology for high speed analog and mixed-signal applications
3. Effects of Ge concentration on SiGe oxidation behavior
4. SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing
5. 2O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films
6. Hot electron and hot hole degradation of UHV/CVD SiGe HBT's
7. On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors
8. Hot carrier effects in advanced self-aligned bipolar transistors