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Volumn 227-228, Issue , 2001, Pages 566-570
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Characterisation and optimisation of MBE grown arsenide/antimonide interfaces
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Author keywords
A1. High resolution X ray diffraction; A1. Interfaces; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials
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Indexed keywords
ABSORPTION SPECTROSCOPY;
INTERFACES (MATERIALS);
LIGHT ABSORPTION;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ANTIMONY COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
SURFACE ROUGHNESS;
X RAY DIFFRACTION ANALYSIS;
ANTIMONIDES;
HIGH RESOLUTION X-RAY DIFFRACTION;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0035399290
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00773-4 Document Type: Conference Paper |
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Times cited : (9)
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References (12)
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