Material engineering for InAs/GaSb/AlSb quantum cascade light emitting devices

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 723-728

  Marcadet, X ^a   Becker, C ^a   Garcia, M ^a   Prevot I ^a   Renard, C ^a   Sirtori, C ^a  

^a THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B1. Antimonide; B2. Semiconductor III V Materials; B3. Infrared devices

Indexed keywords

ELECTROLUMINESCENCE; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

QUANTUM CASCADE (QC) LASERS;

SEMICONDUCTING ANTIMONY COMPOUNDS;

EID: 0037382737     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02319-9     Document Type: Conference Paper

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