Improved InAs/AlSb/GaSb heterostructures for quantum cascade laser applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4287, Issue , 2001, Pages 23-32

  Marcadet, X ^a   Prevot, I ^a   Becker, C ^a   Durand, O ^a   Bisaro, R ^a   Julien, F H ^a   Vinter, B ^a   Sirtori, C ^a  

^a THALES   (France)

Author keywords

Antimonide; Arsenide; Electroluminescence; Interfaces; Intersubband transition; Molecular beam epitaxy; Quantum cascade structures; X ray

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; INFRARED RADIATION; LUMINESCENT DEVICES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; QUANTUM THEORY; REFLECTOMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ALUMINUM ANTIMONIDE; EMISSION ENERGY RATIO; GALLIUM ANTIMONIDE; HIGH RESOLUTION X RAY DIFFRACTION; INDIUM ARSENIDE; QUANTUM CASCADE LASERS; X RAY REFLECTOMETRY;

SEMICONDUCTOR LASERS;

EID: 0034866671     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.429802     Document Type: Conference Paper

References (30)

1. X-ray and neutron reflectivity: Principles and applications
2. Intersubband transitions in quantum wells