Characteristics of Wn/gaas Schottky Contacts Formed by Reactive RF Sputtering

Japanese Journal of Applied Physics

Volumn 23, Issue 12, 1984, Pages L895-L898

  Yamagishi, Haruo ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER - CONTACTS; SEMICONDUCTOR DIODES - CONTACTS; SPUTTERING - APPLICATIONS; TUNGSTEN COMPOUNDS - APPLICATIONS;

FILM FORMATION; SCHOTTKY CONTACT; TRANSITION METAL NITRIDES;

TRANSISTORS, FIELD EFFECT;

EID: 0021661889     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.23.L895     Document Type: Article

References (5)

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3. K. Imamura, N. Yokoyama, T. Ohnishi, S. Suzuki, K. Nakai, H. Nishi and A. Shibatomi: Jpn. J. Appl. Phys. 23 (1984) L342.
4. N. Yokoyama, T. Ohnishi, K. Odani, H. Onodera and M. Abe: Int. Electron Device Meet. Technical Digest (1981) 80.
5. E. H. Rhoderick: Metal-Semiconductor Contacts (Clarendon Press, Oxford, 1978).