Properties of amorphous silicon carbide films prepared by PECVD

Vacuum

Volumn 47, Issue 10, 1996, Pages 1223-1225

  Huran, J ^a   Hrubcin, L ^a   Kobzev, A P ^b   Liday, J ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EXPERIMENTS; HYDROGENATION; PLASMA APPLICATIONS; SILICON CARBIDE;

AMORPHOUS SILICON CARBIDE FILMS; INFRARED SPECTRA; PREPARATION CONDITIONS;

AMORPHOUS FILMS;

EID: 0030259349     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0042-207X(96)00128-5     Document Type: Article

References (4)

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4. J Huran, F Szulenyi and E Pisarovicova, Acta phys slov 39, 116 (1990).