Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: A comparison of methane and toluene as plasma forming gases

Surface and Coatings Technology

Volumn 136, Issue 1-3, 2001, Pages 197-201

  Volz, K ^a   Baba, K ^b   Hatada, R ^b   Ensinger, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b INDUSTRIAL TECHNOLOGY CENTER OF NAGASAKI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ION IMPLANTATION; METHANE; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; TOLUENE; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA IMMERSION ION IMPLANTATION (PIII);

AMORPHOUS FILMS;

EID: 0035254692     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)01055-0     Document Type: Article

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