Selective removal of atoms as a new method for fabrication of nanoscale patterned media

Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 358-364

  Gurovich, B A ^a   Dolgy, D I ^a   Kuleshova, E A ^a   Meilikhov, E Z ^a   Domantovsky, A G ^a   Prikhodko, K E ^a   Maslakov, K I ^a   Aronzon, B A ^a   Rylkov, V V ^a   Yakubovsky, A Yu ^a  

^a KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

Ion irradiation; Nanodevices; Nanoscale structure; Patterned media; Selective removal of atoms

Indexed keywords

FIELD EFFECT TRANSISTORS; ION BEAMS; MICROELECTRONICS; SCHOTTKY BARRIER DIODES;

NANOSCALE STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 0141569488     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00322-8     Document Type: Conference Paper

References (11)

1. Gurovich B.A., Dolgy D.I., Kuleshova E.A., Velikhov E.P., Ol'shansky E.D., Domantovsky A.G., Aronzon B.A., Meilikhov E.Z. Phys. Uspekhi. 44:(1):2001;95.
2. Landau L.D., Lifshitz E.M. 3rd Edition Mechanics. Vol. 1:1976;Butterworth-Heinemann, London.
3. Tompson M.W. Defects and Radiation Damage in Metals. 1969;The University Press, Cambridge.
4. Grigoriev Igor S., Meilikhov Evgenii Z. Handbook of Physical Quantities. 1996;CRC Press, Boca Raton, FL.
5. Cahn R.W., Haasen P. Physical Metallurgy. 3rd Edition: 1983;North-Holland, Amsterdam.
6. Chou S., Krauss P. Microelec. Eng. 35:1997;237.
7. Chou S., Krauss P., Zhang W., Guo L., Zhuang L. J. Vac. Sci. Technol. B. 15:(6):1997;2897.
8. Zankovych S., Hoffmann T., Seekamp J., Brunch J.-U., Sotomayor Torres C.M. Nanotechnology. 12:2001;91.
9. Heidari B., Maximov I., Montelius L. J. Vac. Sci. Technol. B. 18:(6):2000;3557.
10. Heyderman L.J., Schift H., David C., Ketterer B., Auf der Maur M., Gobrecht J. Microelec. Eng. 57-58:2001;375.
11. Carcenac F., Vieu C., Lebib A., Chen Y., Manin-Ferlazzo L., Launois H. Microelec. Eng. 53:2000;163.