Growth and photoluminescence of GaAs quantum dots on Si(100)

Chinese Physics Letters

Volumn 18, Issue 7, 2001, Pages 989-990

  Zhang, Jian Guo ^a   Li, Guang Hai ^a   Zhang, Yong ^a   Jin, Yun Xia ^a   Zhang, Li De ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; NANOCRYSTALS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SPUTTERING;

DOT SIZE; HIGH SPEED; INTEGRATED CIRCUIT TECHNOLOGY; RADIO FREQUENCY SPUTTERING; SI INTEGRATED; STRANSKI-KRASTANOW GROWTH MODE;

GALLIUM ARSENIDE;

EID: 0035591150     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/7/348     Document Type: Article

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