The comparison of thermal and dielectric properties of silsesquioxane films cured in nitrogen and in air

Chemical Physics Letters

Volumn 380, Issue 1-2, 2003, Pages 111-116

  Yu, Suzhu ^a   Wong, Terence K S ^a   Hu, Xiao ^b   Pita, Kantisara ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN METHYL SILSESQUIOXANE; METHYL GROUP; UNCLASSIFIED DRUG;

AIR; ARTICLE; CHEMICAL STRUCTURE; DENSITY; DIELECTRIC CONSTANT; ELECTRIC CURRENT; FILM; MOLECULAR WEIGHT; QUANTITATIVE ANALYSIS; THERMAL ANALYSIS;

EID: 0141545031     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2003.09.018     Document Type: Article

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