Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 7, 2003, Pages

  Shlimak, I ^a   Ginodman, V ^a   Levin, M ^a   Potemski, M ^b   Maude, K ^b   Friedland, K J ^c   Paul, J ^d  

^a BAR ILAN UNIVERSITY   (Israel)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; CONDUCTANCE; CYCLOTRON; ELECTRON; MATHEMATICAL ANALYSIS; MOLECULAR INTERACTION; QUANTUM MECHANICS; TEMPERATURE DEPENDENCE;

EID: 0141515394     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.075321     Document Type: Article

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