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Volumn 14, Issue 9, 1999, Pages 762-767
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Variable-range hopping transport in modulation-doped n-channel Si/Si1-xGex quantum well structures
a,b a,b b a,d a a,e c c |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CONDUCTIVITY OF SOLIDS;
ELECTRON ENERGY LEVELS;
ELECTRON GAS;
MAGNETIC FIELD MEASUREMENT;
MATHEMATICAL MODELS;
OSCILLATIONS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR QUANTUM WELLS;
SHUBNIKOV-DE HAAS EFFECT;
TEMPERATURE MEASUREMENT;
TWO DIMENSIONAL;
CHARACTERISTIC TEMPERATURE;
ELECTRON WAVEFUNCTION;
GAUSSIAN LOCALIZATION;
LANDAU LEVEL;
MAGNETIC FIELD DEPENDENCE;
POWER LAW RELATION;
QUANTUM HALL PLATEAUX;
TEMPERATURE DEPENDENCE;
VARIABLE RANGE HOPPING TRANSPORT;
ELECTRON TRANSPORT PROPERTIES;
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EID: 0033190057
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/14/9/304 Document Type: Article |
Times cited : (11)
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References (24)
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