High-brightness 735 nm tapered diode lasers

Electronics Letters

Volumn 38, Issue 4, 2002, Pages 183-184

  Sumpf, B ^a   Hulsewede R ^a   Erbert, G ^a   Dzionk, C ^a   Fricke, J ^a   Knauer, A ^a   Pittroff, W ^a   Ressel, P ^a   Sebastian, J ^a   Wenzel, H ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; WAVEGUIDES;

RIDGE WAVEGUIDES (RW);

SEMICONDUCTOR LASERS;

EID: 0037075208     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020107     Document Type: Article

References (9)

1. High power AlGaAs-GaAs visible lasers
2. High-power InAlGaAs-GaAs laser diode emitting near 731 nm
3. High-power, reliable operation of 730 nm AlGaAs laser diodes
4. High-performance, reliable, 730-nm-emitting Al-free active region diode lasers
5. 2 W reliable operation of λ = 735 nm GaAsP/AlGaAs laser diodes
6. Semiconductor amplifiers and lasers with tapered gain regions
7. High-power, strained-layer amplifiers and lasers with tapered gain regions
8. High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures
9. 1.5-μm tapered-gain-region lasers with high-cw output powers