Improved theory of the refractive-index change in quantum-well lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 637-642

  Wenzel, Hans ^a   Erbert, Götz ^a   Enders, Peter M ^b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b Fischerinsel 2   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; GAIN MEASUREMENT; MODAL ANALYSIS; REFRACTIVE INDEX; SEMICONDUCTOR QUANTUM WELLS; TENSORS;

DIELECTRIC FUNCTION; DIELECTRIC TENSORS; EFFECTIVE INDEX; INTRABAND COMPONENT; MODAL GAIN; OPTICAL TRANSITIONS;

QUANTUM WELL LASERS;

EID: 0033123888     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788429     Document Type: Article

References (22)

1. M.-C. Amann and B. Stegmüller, "Threshold current analysis of In-GaAsP-InP ridge-waveguide lasers," Proc. Inst. Elect. Eng., vol. 133, pt. J, pp. 341-348, 1986.
2. G. H. B. Thompson, "A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected density," Opto-Electron., vol. 4, pp. 257-310, 1972.
3. C. H. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron., vol. QE-18, pp. 259-264, Feb. 1982.
4. T. L. Koch and J. E. Bowers, "Nature of wavelength chirping in directly modulated semiconductor lasers," Electron. Lett., vol. 20, pp. 1038-1040, 1984.
5. M. S. Hybertsen, "Modeling of the linewidth enhancement factor in multi-quantum well InGaAsP based lasers," Phys. Simulation IV, vol. 2994, pp. 747-757, 1997.
6. M. F. Pereira Jr., S. W. Koch, and W. W. Chow, "Effects of strain and Coulomb interaction on gain and refractive index in quantum-well lasers," J. Opt. Soc. Amer. B, Opt. Phys., vol. 10, pp. 765-773, 1993.
7. A. Tomita, "Free carrier effect on the refractive index change in quantum-well structure," IEEE J. Quantum Electron., vol. QE-30, pp. 2798-2802, Dec. 1994.
8. L. F. Tiemeijer, P. J. A. Thijs, J. J. M. Binsma, T. V. Dongen, "Effect of free carriers on the linewidth enhancement factor of InGaAs/InP (strained-layer) multiple quantum well lasers," Appl. Phys. Lett., vol. 60, pp. 2466-2468, 1992.
9. K. S. Jepsen, N. Storkfelt, M. Vaa, and K. E. Stubkjaer, "Polarization dependence of linewidth enhancement factor in InGaAs/InGaAsP MQW material," IEEE J. Quantum Electron., vol. 30, pp. 635-639, Mar. 1994.
10. D. A. Dahl and L. J. Sham, "Electrodynamics of quasi-two-dimensional electrons," Phys. Rev. B, Opt. Phys., vol. 16, pp. 651-661, 1977.
11. J. Mertsching, "Theorie des dielektrizitätstensors in relaxationszeit-approximation," Phy. Stat. Sol., vol. 17, pp. 799-806, 1966.
12. D. A. Trivedi and N. G. Anderson, "Modeling the near-gap refractive index properties of semiconductor multiple quantum wells and superlattices," IEEE J. Select. Topics Quantum Electron., vol. 2, pp. 197-209, June 1996.
13. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors. New York: Wiley, 1974.
14. P. Enders, A. Bärwolf, M. Wörner, and D. Suisky, "KP theory of energy bands, wave functions and optical selection rules in strained tetrahedral semiconductors," Phys. Rev. B, Opt. Phys., vol. 51, pp. 16695-16704, 1995.
15. P. Enders and M. M. Wörner, "Exact 4 × 4 block diagonalization of the eight-band KP Hamiltonian matrix of tetrahedral semiconductors and its application to strained quantum wells," Semiconduct. Sci. Technol., vol. 11, pp. 983-988, 1996.
16. A. T. Meney, B. Gonul, and E. P. O'Reilly, "Evaluation of various approximations used in the envelope-function method," Phys. Rev. B, Opt. Phys., vol. 50, pp. 10893-10904, 1994.
17. M. A. Afromowitz, "Refractive index of GaAlAs," Solid State Commun., vol. 15, pp. 59-63, 1974.
18. H. Wenzel, unpublished. Available e-mail: wenzel@fbh-berlin.de.
19. T. D. Visser, H. Blok, B. Demeulenaere, and D. Lenstra, "Confinement factors and gain in optical amplifiers," IEEE J. Quantum Electron., vol. 33, pp. 1763-1766, Oct. 1997.
20. A. Oster, F. Bugge, G. Erbert, and H. Wenzel, "Gain spectra measurement of strained and strain-compensated InGaAsP/AlGaAs laser structures for λ ≈ 800 nm," this issue, pp. 631-636.
21. G. Beister, F. Bugge, G. Erbert, J. Maege, P. Ressel, J. Sebastian, A. Thies, and H. Wenzel, "Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (λ = 1020 nm) ridge waveguide laser diodes," Electron. Lett., vol. 34, pp. 778-779, 1998.
22. W. Brauer and H.-W. Streifwolf, Theoretische Grundlagen der Halbleit-erphyik. Berlin, Germany: Springer-Verlag, 1977.