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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1566-1569

Fabrication and characteristics of lateral type GaN field-emission arrays using metalorganic chemical vapor deposition

(7) Lee, Jae Hoon a Lee, Myoung Bok a Hahm, Sung Ho a Lee, Jung Hee a Kim, Jin Sup b Choi, Kyu Man c Kim, Yeo Hwan c

a Kyungpook National University (South Korea)

b Inje University (South Korea)

c Catholic Kwandong University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; ELECTRON EMISSION; ETCHING; FABRICATION; FIELD EMISSION CATHODES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING FILMS; SILICON NITRIDE;

ELECTRON AFFINITY;

SEMICONDUCTOR DIODES;

EID: 0141458166 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1575759 Document Type: Conference Paper

Times cited : (5)

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