Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 1055-1058

  Lee, Jae Hoon ^a   Lee, Myoung Bok ^a   Hahm, Sung Ho ^a   Choi, Hyun Chul ^a   Lee, Jong Hyun ^a   Lee, Jung Hee ^a   Kim, Jin Sup ^b   Choi, Kyu Man ^c   Choi, Chang Auck ^d  

^a Kyungpook National University   (South Korea)

^b Inje University   (South Korea)

^c Catholic Kwandong University   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRON EMISSION; HEAT TREATMENT; INTEGRATED CIRCUITS; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; TRANSCONDUCTANCE;

POLYSILICON EMITTERS;

POLYSILICON;

EID: 0035326321     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1371017     Document Type: Conference Paper

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