H2-based dry plasma etching for mesa structuring of HgCdTe

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 853-858

  Smith, E P G ^a   Musca, C A ^a   Redfern, D A ^a   Dell, J M ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DRY ETCHING; ELECTRIC CURRENTS; HYDROGEN; INFRARED DETECTORS; LASER BEAM EFFECTS; MERCURY COMPOUNDS; METHANE; MICROSCOPIC EXAMINATION; PHOTOCONDUCTIVITY; PLASMA ETCHING; REACTIVE ION ETCHING;

DRY PLASMA ETCHING; LASER BEAM INDUCED CURRENT (LBIC); MERCURY CADMIUM TELLURIDE; SCANNING LASER MICROSCOPY;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033719936     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0237-7     Document Type: Article

References (18)

1. S.H. Su, M. Yokoyama, and Y.K. Su, Mater. Chem. Phys. 50, 205 (1997).
2. S.J. Pearton and F. Ren, J. Vac. Sci. Technol. B11, 15 (1993).
3. K.A. Harris, D.W. Endres, R.W. Yanka, L.M. Mohnkern, A.R. Reisinger, T.H. Myers, A.N. Klymachyov, C.M. Vitrus, and N.S. Dalal, J. Electron. Mater. 24, 1201 (1995).
4. R.C. Keller, H. Zimmermann, M. Seelmann-Eggebert, and H.G. Richter, J. Electron. Mater. 26, 542 (1997).
5. R.C. Keller, M. Seelman-Eggebert, and H.J. Richter, J. Electron. Mater. 24, 1115 (1995).
6. R.C. Keller, M. Seemann-Eggebert, and H.J. Richter, J. Electron. Mater. 25, 1270 (1996).
7. E. Belas, J. Franc, A. Toth, P. Moravec, R. Grill, H. Sitter, and P. Hosch, Semicond. Sci. Technol. 11, 1116 (1996).
8. L.O. Bubulac, W.E. Tennant, D.S. Lo, D.D. Edwall, J.C. Robinson, J.S. Chen, and G. Bostrup, J. Vac. Sci. Technol. A5, 3166 (1987).
9. J.F. Siliquini, J.M. Dell, C.A. Musca, E.P.G. Smith, L. Faraone, and J. Piotrowski, Appl. Phys. Lett. 72, 52 (1998).
10. B.L. Williams, H.G. Robinson, and C.R. Helms, J. Electron. Mater. 27, 583 (1998).
11. C.A. Musca, J.F. Siliquini, E.P.G. Smith, J.M. Dell, and L. Faraone, J. Electron. Mater. 26, 661 (1998).
12. W.E. Tennant, C.A. Cockrum, J.B. Gilpin, M.A. Kinch, M.B. Reine, and R.P. Ruth, J. Vac. Sci. Technol. B18, 1359 (1992).
13. J.F. Siliquini, C.A. Musca, B.D. Nener, and L. Faraone, IEEE Trans. Electron Dev. 42, 1441 (1995).
14. J. Bajaj, W.E. Tennant, R. Zucca, and S.J. Irvine, Semicond. Sci. Technol. 8, 872 (1993).
15. J.T. Wallmark, Proc. IRE 45, 474 (1957).
16. Y.J. Shacham-Diamand and I. Kidron, Infrared Phys. 21, 105 (1981).
17. E.P.G. Smith, J.F. Siliquini, C.A. Musca, J. Anotoszewski, J.M. Dell, and L. Faraone, J. App. Phys. 83, 10 (1998).
18. E.P.G. Smith, C.A. Musca, D.A. Redfern, and L. Faraone, J. Vac. Sci. Technol. A, 17 (1999).