Physical modelling of the melt flow during large-diameter silicon single crystal growth

Journal of Crystal Growth

Volumn 257, Issue 1-2, 2003, Pages 7-18

  Gorbunov, L ^a   Pedchenko, A ^a   Feodorov, A ^a   Tomzig, E ^c   Virbulis, J ^b   Ammon, W V ^c  

^a UNIVERSITY OF LATVIA   (Latvia)

^b Ctr for Processes' Anal/Research   (Latvia)

^c NONE

Author keywords

A1. Fluid flows; A1. Heat transfer; A1. Modelling; A2. Czochralski method; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

CRYSTALLIZATION; EUTECTICS; FLOW OF FLUIDS; HEAT TRANSFER; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; THERMAL EFFECTS; X RAY RADIOGRAPHY;

CRUCIBLE ROTATIONS;

CRYSTAL GROWTH FROM MELT;

EID: 0043011667     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01376-9     Document Type: Article

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