Modelling analysis of oxygen transport during Czochralski growth of silicon crystals

Materials Research Society Symposium - Proceedings

Volumn 490, Issue , 1998, Pages 181-186

  Egorov, Yu E ^a   Makarov, Yu N ^a   Rudinsky, E A ^a   Smirnov, E M ^a   Zhmakin, A I ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HEAT TRANSFER; LAMINAR FLOW; MATHEMATICAL MODELS; OXIDES; OXYGEN; SEMICONDUCTING SILICON; TRANSPORT PROPERTIES; TURBULENT FLOW;

GLOBAL HEAT TRANSFER; OXYGEN TRANSPORT; SILICON CRYSTALS;

CRYSTAL GROWTH FROM MELT;

EID: 0032302927     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)