Analysis of turbulent flow in silicon melts by optical temperature measurement

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 130-133

  Grabner O ^a   Muhe A ^a   Muller G ^a   Tomzig, E ^b   Virbulis, J ^b   Von Ammon, W ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; FLOW PATTERNS; OXYGEN; SINGLE CRYSTALS; TEMPERATURE MEASUREMENT; TURBULENCE; TURBULENT FLOW;

MELT CONVECTION; OPTICAL TEMPERATURE MEASUREMENT; ROTATIONAL FORCES; SILICA QUARTZ TUBES; SILICON MELTS; TEMPERATURE FLUCTUATIONS;

SEMICONDUCTING SILICON;

EID: 0342588052     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00452-3     Document Type: Article

References (11)

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