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Volumn 230, Issue 1-2, 2001, Pages 135-142

Comparison of measurements and numerical simulations of melt convection in Czochralski crystal growth of silicon

Author keywords

A1. Computer simulation; A1. Fluid flow; A1. Heat transfer; A2. Czochralski method; B2. Semiconducting silicon

Indexed keywords

COMPUTATIONAL FLUID DYNAMICS; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; FAST FOURIER TRANSFORMS; HEAT CONVECTION; SEMICONDUCTOR GROWTH;

THREE-DIMENSIONAL TIME-DEPENDENT SIMULATION;

SEMICONDUCTING SILICON;

EID: 0035426715 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01324-0 Document Type: Conference Paper

Times cited : (56)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.