Coherency of copper/sapphire interface studied by atomistic simulation and geometrical analysis

Surface Science

Volumn 542, Issue 1-2, 2003, Pages 45-55

  Dmitriev, Sergey V ^a,b   Yoshikawa, Nobuhiro ^a   Kagawa, Yutaka ^a   Kohyama, Masanori ^c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Aluminum oxide; Computer simulations; Copper; Surface defects

Indexed keywords

ALUMINA; COMPUTER SIMULATION; CRYSTALS; DEFECTS; RELAXATION PROCESSES;

ATOMIC RELAXATIONS;

EPITAXIAL GROWTH;

EID: 0042890517     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00994-4     Document Type: Article

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