Application of the footing effect in the micromachining of self-aligned, free-standing, complimentary metal-oxide-semiconductor compatible structures

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 2274-2279

  Ayon A A ^a   Ishihara, K ^a   Braff, R A ^a   Sawin, H H ^a   Schmidt, M A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS COMPATIBLE; COMPLIMENTARY METAL OXIDE SEMICONDUCTORS; DIELECTRIC ISOLATION; DRY PROCESSING; ETCHING CONDITION; FOOTING EFFECTS; HIGH DENSITY PLASMA ETCHER; IN-SITU; INTELLIGENT SENSORS; LOW CURRENTS; LOW TEMPERATURES; NOTCHING EFFECTS; PASSIVATING FILMS; PLASMA CHEMISTRIES; POLYSILICON LAYERS; PULL-IN; PULL-IN VOLTAGE; SELF-ALIGNED; SIDEWALL PASSIVATION; SILICON ETCHING; SUBMICRON; SUSPENDED STRUCTURE; TIME MULTIPLEXED; VERY LARGE SCALE INTEGRATED; WEAR-TESTING;

ACTUATORS; COMPOSITE MICROMECHANICS; DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTROSTATIC ACTUATORS; ELECTROSTATICS; MICROANALYSIS; MICROFABRICATION; MICROMACHINING; PASSIVATION; PLASMA DEPOSITION; POLYSILICON; SEMICONDUCTING SILICON;

REACTIVE ION ETCHING;

EID: 0042841359     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581760     Document Type: Conference Paper

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