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Volumn 81, Issue 8 pt 1, 1997, Pages 3433-3439
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Influence of electron temperature on pattern-dependent charging during etching in high-density plasmas
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
CURRENT DENSITY;
ELECTRIC FIELD EFFECTS;
ELECTRONS;
GATES (TRANSISTOR);
IONS;
MICROSTRUCTURE;
MONTE CARLO METHODS;
OXIDES;
PLASMA ETCHING;
SEMICONDUCTOR DEVICE STRUCTURES;
SILICON ON INSULATOR TECHNOLOGY;
ELECTRON TEMPERATURE;
GATE OXIDE;
PATTERN DEPENDENT CHARGING;
POLYSILICON ON INSULATOR STRUCTURES;
THERMAL EFFECTS;
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EID: 0031119717
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.365039 Document Type: Article |
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Times cited : (17)
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References (15)
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