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Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 873-876

MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures

(7) Li, A Z a Zhao, Y a Zheng, Y L a Chen, G T b Ru, G P a Shen, W Z c Zhong, J Q a

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

b SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS (China)

c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ABSORPTION; EXCITONS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; STRAIN; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

DOUBLE CRYSTAL X RAY ROCKING CURVES; FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTOR QUANTUM WELLS;

EID: 19244381586 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00976-1 Document Type: Article

Times cited : (7)

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