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Volumn 63, Issue 11, 2001, Pages

Formation of cobalt disilicide films on (3×3)6H-SiC(0001)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; SILICON DERIVATIVE;

EID: 0034900275     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.115312     Document Type: Article
Times cited : (15)

References (25)
  • 1
    • 0003957801 scopus 로고    scopus 로고
    • edited by Y. S. Park (Academic, San Diego
    • SiC Materials and Devices, Vol. 52 of Semiconductors and Semimetals, edited by Y. S. Park (Academic, San Diego, 1998).
    • (1998) Semiconductors and Semimetals , vol.52


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.