Competing influence of damage buildup and lattice vibrations on ion range profiles in Si

Applied Physics Letters

Volumn 83, Issue 3, 2003, Pages 545-547

  Posselt, M ^a   Mader M ^a   Grotzschel R ^a   Behar, M ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Instituto de Fisica Universidade   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ION BOMBARDMENT; ION IMPLANTATION; LATTICE VIBRATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TEMPERATURE;

DECHANNELING;

PHOSPHORUS;

EID: 0042627728     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1594281     Document Type: Article

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