Radiation damage on 6H-SiC Schottky diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 210, Issue , 2003, Pages 196-200

  Nishijima, T ^a   Hearne, S M ^b   Jamieson, D N ^b   Ohshima, T ^c   Lee, K K ^c   Itoh, H ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF MELBOURNE   (Australia)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; RADIATION DAMAGE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; X RAY ANALYSIS;

SCHOTTKY DIODES;

SILICON CARBIDE;

EID: 0042513889     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01069-3     Document Type: Conference Paper

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